Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF-PECVD

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Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF-PECVD

We report on heterojunction solar cells whose thin intrinsic crystalline absorber layer has been obtained by plasma enhanced chemical vapor deposition at 165°C on highly doped p-type (100) crystalline silicon substrates. We have studied the effect of the epitaxial intrinsic layer thickness in the range from 1 to 2.4 μm. This absorber is responsible for photo-generated current whereas highly dop...

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Feasibility of using thin crystalline silicon films epitaxially grown at 165 °C in solar cells: A computer simulation study

We have previously reported on the successful deposition of heterojunction solar cells whose thin intrinsic crystalline absorber layer is grown using the standard radio frequency plasma enhanced chemical vapour deposition process at 165 ◦C on highly doped P-type (100) crystalline silicon substrates. The structure had an N-doped hydrogenated amorphous silicon emitter deposited on top of the intr...

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ژورنال

عنوان ژورنال: Solar Energy Materials and Solar Cells

سال: 2011

ISSN: 0927-0248

DOI: 10.1016/j.solmat.2011.03.038